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Facts About aos silicon carbide Revealed

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Advanced design activities are focusing around the field of specific on-resistance as the major benchmark parameter to get a given technology. For off state stress protection by deep p-areas is adopted, for on-state a thick oxide is used in order to avoid the limits to screen remaining extrinsic oxide defects https://www.quora.com/profile/Trevor-Flatcher-2/Exploration-of-Silicon-Carbide-Application-in-Friction-Materials-https-iflatiron-com-exploration-of-silicon-carbide-a

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